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TCST5123
Vishay Telefunken
Transmissive Optical Sensor with Phototransistor Output
Description
These devices have a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the gap is equal to a package height of 4 mm.
Applications
D Position sensor for shaft encoder, D Detection of opaque material such as paper,
IBM cards, magnetic tapes etc.,
96 12253
D Limit switch for mechanical motions in VCR, D General purpose - wherever the space is limited
Features
D Gap 2.8 mm D Package height: TCST5123: 4.0 mm D Plastic polycarbonate housing D Subminiature construction D Snap-in mounting mechanisms D Current Transfer Ratio (CTR) of typical 20%
C
96 11968
C
E
A
Top view
Order Instruction
Ordering Code TCST5123 Resolution (mm) / Aperture (mm) 0.6 / non Remarks Snap-in construction
Document Number 83766 Rev. A3, 08-Jun-99
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TCST5123
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V mA A mW C
tp 10 ms Tamb 25C
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 70 7 100 150 100 Unit V V mA mW C
Tamb 25C
Coupler
Parameter Total power dissipation Operation temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd Value 250 -25 to +85 -55 to +100 260 Unit mW C C C
t 3 s distance 1.5 mm from case
Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA
100
Coupler
Parameter Test Conditions Collector current 1) VCE = 5 V, IF = 20 mA Crosstalk 2) VCE = 5 V, IF = 20 mA Collector emitter satuIF = 20 mA, IC = 0.025 mA ration voltage 1) Without shield 2) With shield, see mechanical setup Symbol IC ICX VCEsat Min. 2.4 Typ. 4.0 50 Max. Unit mA
mA
0.4 V
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Document Number 83766 Rev. A3, 08-Jun-99
TCST5123
Vishay Telefunken Switching Characteristics
Parameter Turn-on time Turn-off time Test Conditions IC = 1 mA, VCE = 5 V, RL = 100 W (see figure 1) Symbol ton foff Typ. 15.0 10.0 Unit
ms ms
0
IF
IF
+5V IC = 2 mA; adjusted through input amplitude IF
96 11698
RG = 50 W tp = 0.01 T tp = 50 ms
0 tp IC Channel I 50 W 100 W Channel II Oscilloscope RL 1 MW
t
y CL x 20 pF
100% 90%
95 10890
Figure 1. Test circuit
10% 0 tr td ton ts toff ts tf toff (= ts + tf) tf
t
95 10797
0.8 mm
7.2 mm
tp td tr ton (= td + tr)
pulse duration delay time rise time turn-on time
storage time fall time turn-off time
Figure 3. Switching times opt. Achse 1.4 mm
Figure 2. Mechanical setup
Document Number 83766 Rev. A3, 08-Jun-99
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TCST5123
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
400 P tot - Total Power Dissipation ( mW ) 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=25V IF=0
300 Coupled device 200 Phototransistor 100 IR-diode
1000
100
10
0 0
95 11088
1 30 60 90 120 150
95 11090
0
25
50
75
100
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 4. Total Power Dissipation vs. Ambient Temperature
1000.0
Figure 7. Collector Dark Current vs. Ambient Temperature
10 VCE=5V IC - Collector Current ( mA )
I F - Forward Current ( mA )
100.0
1
10.0
0.1
1.0
0.01
0.1 0
96 11862
0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V )
95 11083
0.1
1
10
100
IF - Forward Current ( mA )
Figure 5. Forward Current vs. Forward Voltage
CTR rel - Relative Current Transfer Ratio 2.0
Figure 8. Collector Current vs. Forward Current
10 IC - Collector Current ( mA )
VCE=5V IF=20mA 1.5
IF=50mA 1 20mA
1.0
10mA 0.1 5mA 2mA
0.5
0 -25
95 11089
0.01 0 25 50 75 100
95 11084
0.1
1
10
100
Tamb - Ambient Temperature ( C )
VCE - Collector Emitter Voltage ( V )
Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature
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Figure 9. Collector Current vs. Collector Emitter Voltage
Document Number 83766 Rev. A3, 08-Jun-99
TCST5123
Vishay Telefunken
100 CTR - Current Transfer Ratio ( % ) I Crel - Relative Collector Current VCE=5V 110 100 90 80 70 60 50 40 30 20 10 0 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 0.1 0.2 0.3 0.4 0.5
15139
0
A=1.2mm
10
s
1
0.1 0.1
95 11085
1
10
100
IF - Forward Current ( mA )
s - Displacement ( mm )
Figure 10. Current Transfer Ratio vs. Forward Current
t on / t off - Turn on / Turn off Time ( m s ) 20 Non Saturated Operation VS=5V RL=100W
Figure 12. Relative Collector Current vs. Displacement
15
10 ton 5 toff 0 0 2 4 6 8 10
95 11086
IC - Collector Current ( mA )
Figure 11. Turn on / off Time vs. Collector Current
Document Number 83766 Rev. A3, 08-Jun-99
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TCST5123
Vishay Telefunken Dimensions of TCST5123 in mm
9612102
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Document Number 83766 Rev. A3, 08-Jun-99
TCST5123
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83766 Rev. A3, 08-Jun-99
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